The intense inward diffusion and reaction of silicon (Si) at the silicide coating/refractory alloy interface significantly contribute to the degradation of the oxidation resistance and the shortened service life of silicide coatings at elevated temperatures. This study elucidates the mechanisms of Si diffusion and the growth behavior of the interdiffusion layer. Furthermore,the impact of Si reaction diffusion on the chemical composition,microstructure,and oxidation resistance of silicide coatings at high temperatures is examined. The research advancements,performance characteristics,operational mechanisms,advantages,and disadvantages of various Si diffusion inhibition methods—including elemental modification,second phase doping,and interfacial barrier layer technology—are discussed in detail. Finally,future research directions in the field of anti-diffusion layer technology are proposed.
维普
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