首页|Solution-processed rare-earth thulium oxide with high permittivity for low-voltage transistor and inverters applications
Solution-processed rare-earth thulium oxide with high permittivity for low-voltage transistor and inverters applications
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The use of high-permittivity(high-k)thin films as gate dielectrics is essential in the development of low-power electronics.In this work,rare-earth thulium oxide(Tm2O3)thin films were prepared by a facile solution process and annealed at various temperatures from 400 to 700 ℃.The evolution of the physical and dielectric properties of Tm2O3 thin film with annealing temperature was investigated.It is demonstrated that the Tm2O3 thin film annealed at 600 ℃ exhibits the optimal performance,including a low leakage current of 3 × 10-10 A/cm2,a large areal capacitance of 250 nF/cm2 at 100 Hz,and a high permittivity value of 14.2.The Tm2O3 thin film as a gate insulator was integrated into the thin film transistor(TFT)employing In2O3-based semiconducting channels.The In2O3 TFT with 600 ℃-annealed Tm2O3 dielectric exhibits the superior performance,with a high Ion/Ioff of 1.65 × 107,a small subthreshold swing(SS)value of 0.2 V/dec,a VTH of+1.8 V,and a mobility of 1.68 cm2/(V·s).Furthermore,an inverter constructed by connecting the TFT with a resistor exhibits full-swing characteristics.This work provides a facile and appealing method for preparing the high-k Tm2O3 thin films as alternative gate dielectrics with the potential for use in low-power electronics and logic circuit applications.
Rare earthsTm2O3DielectricTransistorInverter
Daiming Liu、Fei Wang、Yongtao Zhang、Ya'nan Ding
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Shandong Engineering Laboratory for Preparation and Application of High-performance Carbon-Materials,College of Electromechanical Engineering,Qingdao University of Science & Technology,Qingdao,266061,China
College of Electronic and Information Engineering,Shandong University of Science and Technology,Qingdao,266590,China
National Natural Science Foundation of ChinaNational Natural Science Foundation of China
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