首页|Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

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In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.

4H-silicon carbide(4H-SiC)trench-gatesuperjunctionclamping diode

Huang Yi、Wang Xuecheng、Gao Sheng、Liu Bin、Zhang Hongsheng、Han Genquan

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School of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China

School of Electronic Science and Engineering,Nanjing University,Nanjing 210008,China

School of Microelectronics,Xidian University,Xi'an 710126,China

General Program of National Natural Science Foundation of ChongqingDoctoral Research Startup Fund of Chongqing University of Posts and TelecommunicationsTechnology Innovation and Application Demonstration Key Project of Chongqing MunicipalityTechnology Innovation and Application Demonstration Key Project of Chongqing Municipality

CSTB2023NSCQ-MSX0475A2023-7cstc2019jszxzdztzxX0005cstc2020jscxgksbX0011

2024

10.19682/j.cnki.1005-8885.2024.0001

中国邮电高校学报(英文版)
北京邮电大学

中国邮电高校学报(英文版)

影响因子：0.419
ISSN：1005-8885
年,卷(期)：2024.31(2)
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