首页|Trench gate GaN IGBT with controlled hole injection efficiency
Trench gate GaN IGBT with controlled hole injection efficiency
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In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2％reduction in turn-off time and a notable 28.5％decrease in turn-off loss.
gallium nitride insulated gate bipolar transistor(GaN IGBT)hole injectiontrench gateturn-off loss
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NSTL
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