首页|Performance study of vertical MSM solar-blind photodetectors based on β-Ga2O3 thin film
Performance study of vertical MSM solar-blind photodetectors based on β-Ga2O3 thin film
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In this work,β-Ga2O3 thin films were grown on SiO2 substrate by atomic layer deposition(ALD)and annealed in N2 atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grown β-Ga2O3 thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and investigated.The PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7 x 106,and ultra-high detectivity of 4.25 × I014 Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1 000 times and 100 times,respectively.In addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67 × 104％,and also exhibit robustness and repeatability,which indicate excellent performance.Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.
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