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铟在氯化物熔盐中的氧化还原行为

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采用循环伏安、计时电位等电化学分析测试手段对450℃下LiCl−KCl共融盐中In(Ⅲ)在惰性钼电极上的电化学行为进行系统研究.结果表明:In(Ⅲ)在熔盐中的还原是一个两步过程,电极反应In(Ⅲ)/In(I)和In(I)/In分别发生在−0.4 V和−0.8 V(vs Ag/AgCl).结合还原过程电子转移数的理论计算以及恒电位沉积产物的表征进一步证明In(Ⅲ)在熔盐中的两步还原机制.此外,根据循环伏安和计时电位测试结果计算铟离子在450℃下LiCl−KCl共融盐中的扩散系数.采用两种方法得到的数据吻合良好,结果为DIn(Ⅲ)=1.8×10−5 cm2/s和DIn(I)=1.4×10−4 cm2/s.
Redox behavior of indium in molten chlorides
An electrochemical study on the redox behavior of indium in the eutectic LiCl−KCl system at 450 ℃ was carried out with the transient techniques of cyclic voltammetry and chronopotentiometry on an inert molybdenum electrode. The reduction of In(Ⅲ) was found to be a two-step process involving In(Ⅲ)/In(Ⅰ) and In(Ⅰ)/In couples at the potentials of about−0.4 and−0.8 V versus Ag/AgCl, respectively. The redox mechanism was further confirmed by the theoretical evaluation of the number of transferred electrons based on cyclic voltammetry and characterizations of the precipitates generated by the potentiostatic electrolysis. The diffusion coefficients of indium ions in the eutectic LiCl−KCl melt at 450 ℃ were estimated by cyclic voltammetry and chronopotentiometry. The results obtained through the two methods are in fair agreement, delivering an average diffusion coefficient of approximately 1.8×10−5 cm2/s for In(Ⅲ), and 1.4×10−4 cm2/s for In(Ⅰ).

indium ionsredox behavioreutectic LiCl−KCl meltend-of-life LCDsresources recycling

徐亮、熊延杭、孟金伟、王家保、华中胜、田勇攀、尤静林、赵卓

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安徽工业大学 冶金工程与资源综合利用安徽省重点实验室,马鞍山 243032

安徽工业大学 冶金工程学院,马鞍山 243032

上海大学 省部共建高品质特殊钢冶金与制备国家重点实验室,上海 200444

铟离子 氧化还原行为 LiCl−KCl共融盐 废弃液晶显示屏 资源回收

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaChina Postdoctoral Science Foundation##Foundation of Anhui Province Key Laboratory of Metallurgical Engineering&Resources Recycling of ChinaFoundation of Anhui Province Key Laboratory of Metallurgical Engineering&Resources Recycling of China

51904003U1703130517040112019M651466SKF18-01SKF19-05

2021

中国有色金属学报(英文版)
中国有色金属学会

中国有色金属学报(英文版)

CSTPCDCSCDSCI
影响因子:1.183
ISSN:1003-6326
年,卷(期):2021.31(5)
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