The molecular dynamics model of interconnecting chips(SiC)and substrate(Cu)through sintering of silver nanoparticles(AgNPs)was established,and the sintering process at different temperatures was simulated.Uniaxial tensile simulations of the sintered samples and the interconnect interfaces were carried out,and the influences of sintering temperature on the overall strength of the sintered samples as well as the interface strength were summarized.The results show that the sintering neck width between AgNPs and SiC plate is larger than that between AgNPs and Cu plate at lower sintering temperatures,while the opposite is true at higher sintering temperatures.In addition,the tensile fracture position of the sintered sample will be inclined to the side with smaller sintering neck width.The smaller the width difference between the two sintering necks,the more the fracture location tends to the middle position,and the overall tensile fracture energy is inversely proportional to the width difference between the two sintering necks.Moreover,the interfacial strengths of the two bonding interfaces after sintering are higher than that of the AgNPs,and the interfacial strength increases significantly when the sintering temperatures is higher than 650 K.The SiC/Ag interconnect interface is brittle,and the higher the sintering temperature,the more obvious the brittleness.While the Cu/Ag interconnect interface is tough,and its toughness and brittleness are less affected by the sintering temperature.
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