Study on the Reliability of LED by the Growth Temperature and Thickness of P-Type Overlay
With the continuous development of semiconductor materials,GaN,a third-generation semiconductor material represented by group 111 nitride,has the advantages of wide band,high melting point,high electron mobility,high breakdown field strength and high thermal conductivity.It is widely used in high-brightness light-emitting diodes(LEDs),laser diodes,solar cells,and high-temperature,high-frequency and high-power electronic device manufacturing.The rapid growth of the GaN-based light-emitting diode(LED)market has higher and higher quality requirements for LED products.At present,due to the influence of lattice mismatch,membrane stress,penetration dislocation or defects and other factors,V-pits defects will be formed in the MQW multi-quantum well layer of the epitaxial structure,V-pits can inhibit carrier non-radiation compounding to a certain extent and improve luminous efficiency.However,if V-pits are pursued unilaterally,it will make it difficult for the P-type cover to fill it well,which will easily lead to reverse leakage of the epitaxial structure and further affect the anti-static ability of the device.Therefore,this paper mainly studies the impact of the growth conditions of the p-type overlay on the reliability of LED devices.The growth temperature and growth thickness of the p-type covering layer are discussed.
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