摘要
随着半导体材料的不断发展,以Ⅲ族氮化物为代表的第三代半导体材料GaN具有宽禁带,高熔点,高电子迁移率,高击穿场强以及高热导率等优越特性.广泛应用于高亮度发光二极管(LED)、激光二极管、太阳能电池以及高温、高频和高功率电子器件制造等领域.GaN基发光二极管(LED)市场的高速增长,对LED产品的质量要求越来越高,目前由于晶格失配、膜层应力、穿透位错或缺陷等因素的影响,会在外延结构的MQW多量子阱层中形成V-pits缺陷,V-pits在一定程度上可以抑制载流子非辐射复合,提升发光效率.但是如果单方面追求V-pits,会导致P型覆盖层(本文提到的P型覆盖层含P-GaN和P-AlGaN)很难将其填充好,容易导致外延结构出现反向漏电的情况,进一步影响器件的抗静电能力.因此本文主要研究P型覆盖层的生长条件对LED器件可靠性的影响,从P型覆盖层的生长温度和生长厚度两方面来展开讨论.
Abstract
With the continuous development of semiconductor materials,GaN,a third-generation semiconductor material represented by group 111 nitride,has the advantages of wide band,high melting point,high electron mobility,high breakdown field strength and high thermal conductivity.It is widely used in high-brightness light-emitting diodes(LEDs),laser diodes,solar cells,and high-temperature,high-frequency and high-power electronic device manufacturing.The rapid growth of the GaN-based light-emitting diode(LED)market has higher and higher quality requirements for LED products.At present,due to the influence of lattice mismatch,membrane stress,penetration dislocation or defects and other factors,V-pits defects will be formed in the MQW multi-quantum well layer of the epitaxial structure,V-pits can inhibit carrier non-radiation compounding to a certain extent and improve luminous efficiency.However,if V-pits are pursued unilaterally,it will make it difficult for the P-type cover to fill it well,which will easily lead to reverse leakage of the epitaxial structure and further affect the anti-static ability of the device.Therefore,this paper mainly studies the impact of the growth conditions of the p-type overlay on the reliability of LED devices.The growth temperature and growth thickness of the p-type covering layer are discussed.
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