Study on Ni-Sn Bonding Technology of GaN Based the Vertical Structure LED
Metal bonding is an important technology in electronic device packaging,The effect of Ni-Sn wafer bonding conditions on bonding quality was studied,the holes and warping of Ni-Sn wafer bonding were reduced by optimizing bonding conditions,the vertical structure LED device were prepared and the effect of wafer bonding is verified by reliability test.The results show that the device prepared by 15 min bonding at 250℃/5000 kgf is aged for 1000 hours,the voltage fluctuation is less than 0.01 V and the light output power is less than 3 mW.
metal bondingthe vertical structure LEDNi-Sn wafer bondingthe holeswarping
NETL
NSTL
万方数据
