GaN基垂直结构LED的Ni-Sn键合工艺研究
Study on Ni-Sn Bonding Technology of GaN Based the Vertical Structure LED
旷明胜1
作者信息
- 1. 佛山市国星半导体技术有限公司,广东 佛山 528000
- 折叠
摘要
金属键合是电子器件封装中的重要技术.本文研究了Ni-Sn晶圆键合条件对键合质量的影响,通过优化键合条件降低了Ni-Sn晶圆键合的孔洞及翘曲,制备成垂直结构LED器件并通过可靠性老化测试验证了晶圆键合的质量.研究结果表明:250℃/5000 kgf条件下键合 15 min制备的器件老化 1000 h,正向电压波动小于0.01 V,光输出功率波动小于3mW.
Abstract
Metal bonding is an important technology in electronic device packaging,The effect of Ni-Sn wafer bonding conditions on bonding quality was studied,the holes and warping of Ni-Sn wafer bonding were reduced by optimizing bonding conditions,the vertical structure LED device were prepared and the effect of wafer bonding is verified by reliability test.The results show that the device prepared by 15 min bonding at 250℃/5000 kgf is aged for 1000 hours,the voltage fluctuation is less than 0.01 V and the light output power is less than 3 mW.
关键词
金属键合/垂直结构LED/Ni-Sn晶圆键合/孔洞/翘曲Key words
metal bonding/the vertical structure LED/Ni-Sn wafer bonding/the holes/warping引用本文复制引用
出版年
2024
NETL
NSTL
万方数据