Simulation Analysis of Temperature Field of CMP Process on SiC Substrate Based on Fluid-Solid Coupling
In the process of chemical mechanical polishing of SIC substrates,the polishing interface temper-ature is one of the key factors affecting the polishing efficiency.The temperature distribution of the CMP process on silicon carbide substrates was investigated,and the effects of different polishing process parame-ters and polishing solution components on the polishing interface temperature were analyzed.The surface temperature distribution of the SiC substrate during the polishing process was obtained by considering the grinding effect of the polishing pad and polishing fluid on the SiC substrate using the fluid-solid coupling module of the finite element analysis software ANSYS.The simulation results show that the radial tempera-ture of the SiC substrate gradually increases from the center to the edge,and the rising trend at the edge gradually decreases or even shows a small decrease in temperature,with the maximum temperature differ-ence close to0.4℃(about 4%).The relationship between different influencing factors and temperature was investigated through single-factor experiments,and it is concluded that the average temperature of the SiC surface increased with increasing polishing speed and polishing pressure,both of which are approxi-mately linear,and the difference between the temperature at the edge and the centreis increasing;mean-while,the substrate interface temperature increased with increasing abrasive concentration of the polishing solution,but the change is relatively small.
chemical mechanical polish(CMP)SiCtemperaturefluid-solid couplingfinite element sim-ulation
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