Study on the Mechanism of Single Crystal Silicon Surface Damage by the Polishing Speed of Structured Abrasives
In order to investigate the effect of different polishing speeds of structured abrasives on the polis-hing behavior of monocrystalline silicon,the polishing behavior of structured abrasives on monocrystalline silicon at the nanoscale was investigated using molecular dynamics methods.The surface damage mecha-nism of monocrystalline silicon by the polishing speed of structured abrasives was comprehensively ana-lyzed based on the changes of polishing heat,polishing force and hydrostatic stress,as well as the generation and variation of atomic defects.It has been demonstrated that high structured abrasive polishing speed re-duces the stresses in single crystal silicon and in this way reduces dislocation nucleation in single crystal sil-icon.However,the motion of single-crystal silicon atoms is affected by the increase in system temperature by the high structured abrasive polishing rate,resulting in an increase in the thickness of the subsurface damage layer.In addition,the polishing force is affected by the thermal softening effect,and the selection of an appropriate polishing speed can effectively control the surface roughness,dislocation nucleation genera-tion and formation,the number of high-pressure phase transition atoms,and the thickness of the subsurface deformation layer after processing.
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