首页|Growth process,defects,and dopants of bulk β-Ga2O3 semiconductor single crystals
Growth process,defects,and dopants of bulk β-Ga2O3 semiconductor single crystals
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β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and radiation.Compared to the single crystals of other semiconductors,high-quality and large-size β-Ga2O3 single crystals can be grown with low-cost melting methods,making them highly competitive.In this review,the growth process,defects,and dopants ofβ-Ga2O3 are primarily discussed.Firstly,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)of β-Ga2O3 single crystals are summarized and compared in detail.Then,the defects of β-Ga2O3 single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically discussed.Besides,the influences of impurities and intrinsic defects on the electronic and optical properties of β-Ga2O3 are also briefly discussed.Concluding this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects of β-Ga2O3 single crystals.
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