To meet the requirements for high linearity and out-of-band signal suppression in the RF communication front-end receiver,an RF receiver front-end operated at 5-6 GHz based on 130 nm SoI technology was proposed.The RF receiver front-end consisted of a low-noise amplifier(LNA)with bypass and out-of-band suppression,an RF switch,and a bandgap reference bias circuit.For a cascode-based LNA,an LC notch filter was used for input matching to achieve out-of-band suppression.In the bias circuit,a bandgap reference current source was used for temperature compensation for the bias of the LNA,thereby shielding the effect of the power supply ripple.The RF receiver front-end was processed and tested.Results showed that within the operating frequency band of 5-6 GHz,the gain of the receiver chip was 13.4-14.0 dB,input and output reflection coefficients were below-10 dB,the minimum noise figure was 1.6 dB,the input 1 dB compression point was greater than-4 dBm,and the input third-order intercept point was greater than+7 dBm.The amplifier was unconditionally stable across the entire frequency band.The DC power consumption was 30 mW at 2 V supply voltage,and the chip area was 0.56 mm2.
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