Effect of H2 on the Graphene Growth at Different Stages in the Plasma Enhanced Chemical Vapor Deposition Process
Graphene,a new two-dimensional material with excellent performance,has great potential for applications in the fields of aerospace,electronic devices,and bio-medical.Plasma enhanced chemical vapor deposition(PECVD)was used to prepare grapheneon copper foil using a mixture of hydrogen and methane gas.The mechanism of H2 on the nucleation and growth of graphenein growth and cooling stage of PECVD was studied.The results show that in the PECVD process,the pre-etching of copper substrate by H2 plasma before graphene growth would increase the roughness of the substrate,which is not conducive to the growth of low-density and large-size graphene grains.During the growth process,H2 could etch multiple layers of graphene,and a single layer of graphene could be formed at higher H2 flow rate.After the end of growth,holdingthe graphene in H2 for a certain period of time,it would be etched into ribbons,and the etching would be intensified with the extension of holding time.
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