首页|不同试验条件对非晶硒薄膜中载流子迁移率的影响

不同试验条件对非晶硒薄膜中载流子迁移率的影响

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非晶态硒(α-Se)属于无机弱电导材料,被认为是X射线医学成像和无损检测方面最有前途的探测材料之一,其载流子特性对应用至关重要.本文在恒温条件下制备了非晶态硒本征薄膜,利用SEM、XRD测试了薄膜的微观形貌和晶体结构,利用渡越时间(TOF)方法研究了温度、取样电阻及光脉冲能量对载流子迁移率的影响.结果表明:在 298~338K的温度范围内,非晶硒的载流子输运规律符合浅陷阱模型;取样电阻不大于 5 kΩ,光脉冲能量不大于 3.5 μJ时,载流子渡越时间保持恒定,测试结果可靠.
Effect of Different Experimental Conditions on Charge Carrier Mobility of α-Se Films
α-Se is an inorganic weak conductive material,and it is one of the most promising materials in the field of X-ray medical imaging and nondestructive testing,the carrier properties are of vital importance to its application.The α-Se intrinsic film was prepared under the condition of constant temperature,the surface microstructure and crystal structure of the film were tested using SEM and XRD.The effects of temperature,sampling resistance,and light pulse energy on the carrier mobility were studied by the time-of-flight method.The results show that in the temperature range of 298-338 K,the carrier transport of the α-Se is consistent with the shallow trap model.The carrier transit time is constant when the sampling resistance is not more than 5 k Ω and the optical pulse energy is not more than 3.5 μ J.

optoelectronicsα-Se filmtime-of-flight methodmobility

李瑞东、金大利、张梅东、于立苹、王建伟

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防灾科技学院 基础课教学部,河北 三河 065201

天津市地震局,天津 300201

天津市信息工程学校,天津 301900

河北省地矿局第七地质大队,河北 三河 065201

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光电子学 非晶硒薄膜 渡越时间方法 迁移率

廊坊市科技支撑计划项目

2022011063

2024

真空
中国机械工业集团公司沈阳真空技术研究所

真空

CSTPCD
影响因子:0.926
ISSN:1002-0322
年,卷(期):2024.61(4)
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