Effect of Different Experimental Conditions on Charge Carrier Mobility of α-Se Films
α-Se is an inorganic weak conductive material,and it is one of the most promising materials in the field of X-ray medical imaging and nondestructive testing,the carrier properties are of vital importance to its application.The α-Se intrinsic film was prepared under the condition of constant temperature,the surface microstructure and crystal structure of the film were tested using SEM and XRD.The effects of temperature,sampling resistance,and light pulse energy on the carrier mobility were studied by the time-of-flight method.The results show that in the temperature range of 298-338 K,the carrier transport of the α-Se is consistent with the shallow trap model.The carrier transit time is constant when the sampling resistance is not more than 5 k Ω and the optical pulse energy is not more than 3.5 μ J.