等离子体增强原子层沉积二氧化硅对多晶硅的损伤机理及防范工艺研究
The Mechanism and the Prevention of Plasma Enhanced Atomic Layer Deposition Induced Polysilicon Damage
何亚东 1袁刚 2李拓 3周毅 1程晓敏 4霍宗亮1
作者信息
- 1. 长江存储科技有限责任公司 武汉 430078
- 2. 长江存储科技有限责任公司 武汉 430078;华中科技大学集成电路学院 武汉 430074
- 3. 华中科技大学化学与化工学院 武汉 430074
- 4. 华中科技大学集成电路学院 武汉 430074
- 折叠
摘要
文章通过电子束检测(EBI)手段研究了等离子体增强原子层沉积(PEALD)SiO2 过程中硅烷基酰胺类前驱体副产物对多晶硅产生不可逆损伤的机理.提出用单胺基硅烷基酰胺替代多胺基硅烷基酰胺作为前驱体,来减轻对多晶硅材料的损伤.在不损伤多晶硅前提下,进一步研究化学位阻较小的单胺基前驱体二异丙胺硅烷(DIPAS)对反应速率的影响.
Abstract
In this study,electron beam inspection(EBI)was used to investigate the mechanism of irreversible damage caused by by-products of the aminosilane precursors during the deposition of silicon oxide thin films with plasma enhanced atomic layer deposition(PEALD).It is proposed to replace polyamine based aminosilane with monoamine based aminosilane as precursors to reduce the damage to polysilicon materials.The effect of monoamine based diisopropylamine(DIPAS)precursors with small steric hindrance on the reaction rate of PEALD silicon oxide was studied without the damage of polysilicon.
关键词
等离子体增强原子层沉积/硅烷基酰胺/氧化硅/二异丙胺硅烷(DIPAS)Key words
Plasma enhanced atomic layer deposition/Aminosilane/Silicon oxide/Diisopropylamine silane(DIPAS)引用本文复制引用
出版年
2024
NETL
NSTL
万方数据