Vacuum nano-diodes and nano-triodes have basic functions similar to traditional vacuum tubes,but can be manufactured by the most advanced micro-fabricating line to achieve small size,light weight and high integration,which makes them a rapid development in the past decade.The origin,development process and state-of-the-art of vacuum nano-diodes and nano-triodes are reviewed.Typical nanoscale vacuum devices with lateral structure,vertical structure and gate-all-around structure are introduced,and their strengths and weaknesses are analyzed.Silicon devices are most compatible with the mature micro-fabrication process,but the devices based on metals or wide band-gap semiconductors,such as silicon carbide and gallium nitride,have better electrical properties,higher temperature resistance and stronger radiation endurance.Although the developing vacuum nano-diodes and nano-triodes still cannot compete with solid-state integrated circuits in most regular applications,they are attracting more attention and are expected to be employed in harsh conditions with high temperatures or strong radiations.
Vacuum electron deviceNano-diodeNano-triodeTemperature resistanceRadiation en-durance
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