太赫兹真空器件中超深金属慢波结构的微加工技术
Micromachining Technology of Ultra-Deep Metal Slow Wave Structure of Terahertz Vacuum Electronic Devices
姜琪 1李兴辉 1冯进军 1蔡军 1潘攀1
作者信息
- 1. 北京真空电子技术研究所微波电真空器件国家级重点实验室 北京 100015
- 折叠
摘要
太赫兹真空电子器件物理结构尺寸变化随着波长的减小而减小,对微小结构的尺寸精度与表面粗糙度要求也大大增加.随着器件频率进入到太赫兹频段,慢波结构的深度达到几十微米或者百微米量级,加工的难点主要有:材料为金属,结构超深,表面粗糙度要求达到几十纳米量级,微电铸后金属含氧量极小,结构密度大不漏气,经得起后续近千摄氏度的高温处理工艺等.文章介绍了太赫兹频段下器件慢波结构的加工方式,着重讨论利用深反应离子刻蚀(DRIE)技术和紫外-光刻、电铸(UV-LIGA)技术加工超深金属慢波结构的技术和和特点,并介绍了本实验室利用UV-LIGA加工折叠波导的研究进展.
Abstract
With the increase in frequency of vacuum electronic devices,the size of slow wave structure is reduced to tens of microns,and requirements for dimensional accuracy and surface roughness are constantly increasing during processing.The processing method of slow wave structure at terahertz frequency is introduced in this paper.The characteristics and research status of deep reactive ion etching(DRIE)and ultraviolet-Lithographie Galvanoformung Abformung(UV-LIGA)are discussed.The research progress of the folded waveguide with UVLIGA in national key laboratory of science and technology on vacuum electronics is also introduced.
关键词
太赫兹真空电子器件/微机电系统/深反应离子刻蚀/紫外-光刻、电铸/慢波结构Key words
Terahertz vacuum electronics devices/Micro-electro-mechanical system/Deep reactive ion etching/Ultraviolet-Lithographie Galvanoformung Abformung/Slow wave structure引用本文复制引用
出版年
2024
NETL
NSTL
万方数据