Efficient,accurate and comprehensive measurement of photoelectric thin films can provide in-depth information about their structural properties,electrical and optical characteristics,etc.,which plays a key role in the design and performance optimization of devices.Additionally,the detection and characterization of photoelectric thin film also provide an important theoretical basis and guidance for the research and development of photoelectric thin film materials and promote the technical progress and application expansion in the field of photoelectric devices,which is of great academic significance and application value.In recent years,a variety of new detection and characterization techniques have emerged,but there are a few related reviews of the literature,which makes it difficult to intuitively understand the principles of the latest characterization methods and their specific applications in the optimization of device performance.In this paper,the basic principles and characteristics of current detection and characterization techniques of photoelectric thin films are reviewed based on the three dimensions of angle-resolved,spatially-resolved and time-resolved,and the application progress of relevant techniques in the luminescence characteristics,visualization of spatial heterogeneity and carrier dynamics of photoelectric thin films is introduced.Finally,the future development trends of photoelectric thin film detection and characterization technologies are discussed and anticipated.
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