真空与低温2024,Vol.30Issue(1) :39-47.DOI:10.12446/j.issn.1006-7086.2024.01.005

典型低轨辐照环境对MoS2-Ti薄膜真空摩擦学性能的影响

Influence of the Typical Low-orbital Irradiation Environment on the Tribological Performance of MoS2-Ti Film in Vacuum

胡汉军 贺颖 张凯锋 周晖
真空与低温2024,Vol.30Issue(1) :39-47.DOI:10.12446/j.issn.1006-7086.2024.01.005

典型低轨辐照环境对MoS2-Ti薄膜真空摩擦学性能的影响

Influence of the Typical Low-orbital Irradiation Environment on the Tribological Performance of MoS2-Ti Film in Vacuum

胡汉军 1贺颖 1张凯锋 1周晖1
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作者信息

  • 1. 兰州空间技术物理研究所 真空技术与物理重点实验室,兰州 730000
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摘要

采用非平衡磁控溅射方法在 9Cr18基底上制备了MoS2-Ti薄膜,并对 4组样品分别进行了电子辐照、电子/质子辐照、电子/质子/紫外辐照、电子/质子/紫外/原子氧辐照.采用SEM、XRD、XPS分析了辐照前后薄膜的结构和化学组成变化,通过摩擦试验考察了辐照前后薄膜的摩擦学性能,探讨了其损伤机制.研究结果表明,电子辐照、质子辐照、紫外辐照对MoS2-Ti薄膜的显微组织结构、表面形貌及摩擦学性能没有明显影响.动能 5eV的原子氧对MoS2-Ti薄膜表面有显著的损伤,主要表现在表面出现"绒毯"状形态,Mo、S和Ti元素被氧化成高价氧化物.原子氧辐照导致MoS2-Ti薄膜摩擦起始和中段摩擦因数升高、中段摩擦因数不稳定,比磨损率增大.

Abstract

The specimens of MoS2-Ti film on substrate of 9Cr18 were prepared by the method of unbalanced magnetron sputtering,and then different kinds of irradiation experiments were conducted for five group specimens,which of them were no irradiation,electron,electron/proton,electron/proton/ultraviolet,electron/proton/ultraviolet/atomic oxygen.Through the characterizations of SEM,XRD,XPS profile analysis and friction tests,the influence of each irradiation on the film's mi-crostructure,chemical components and tribological performance in vacuum was studied comprehensively.The results re-vealed there were not great effects on the microstructure,surface morphology and tribological performance,caused by the ir-radiation of electron,proton,ultraviolet.The atomic oxygen with an energy of 5 eV showed strong damage effects on the film,leading to the'blanket-like'surface morphology,the oxidation of Mo,S,Ti,which resulted in the increase of friction coefficient at initial and middle stages,fluctuation at middle states,as well as the increase of specific wear rate.

关键词

MoS2-Ti/摩擦学/原子氧/辐照

Key words

MoS2-Ti/tribology/atomic oxygen/irradiation

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出版年

2024
真空与低温
中国航天科技集团公司第五研究院510研究所

真空与低温

CSTPCD
影响因子:0.567
ISSN:1006-7086
参考文献量29
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