Effect of Electrode Spacing on the Properties of Anti-atomic Oxygen Polysiloxane Thin Film
Compared to conventional methods of preparing protective films,the plasma polymerization approach is a more efficient,dry,and simple preparation procedure that allows the preparation of dense thin films with a thickness of hun-dreds of nanometers on a variety of substrates.In this paper,anti-atomic oxygen polysiloxane thin film were prepared on large-area flexible Kapton substrate by plasma-enhanced chemical vapor deposition(PECVD).The effect of electrode spac-ing on the properties of anti-atomic oxygen polysiloxane thin film was investigated using SEM,AFM,FTIR and XPS.The re-sults show that the reduction of electrode spacing accelerates the degree of monomer dissociation and the oxidation process of carbon-based components.With the decrease of electrode spacing,the deposition rate of the film increases,and the film trans-forms from organic-inorganic polysiloxane film(SiOxCyHz)to inorganic film(SiO2).The increase of high dissociation ener-gy Si-O bonds in the as-deposited films reduces the erosion rate of atomic oxygen of the films.This paper also establishes a technical foundation for the adjustment of the properties of other organosilicon functional films prepared by PECVD.
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