电极间距对防原子氧聚硅氧烷薄膜性能的影响
Effect of Electrode Spacing on the Properties of Anti-atomic Oxygen Polysiloxane Thin Film
李毅 1何延春 1王虎 1王兰喜 1曹生珠 1袁璐 1王江伟 1李中华1
作者信息
- 1. 兰州空间技术物理研究所 真空技术与物理重点实验室,兰州 730000
- 折叠
摘要
与传统制备防护薄膜的方法相比,等离子体聚合法是一种更高效、干燥和简易的制备方法,可以在各种基底上制备数百纳米厚的致密薄膜涂层.采用等离子增强化学气相沉积(PECVD)法在大面积柔性聚酰亚胺Kapton基底上制备了聚硅氧烷防原子氧薄膜.用SEM、AFM、FTIR和XPS等表征分析了电极间距对聚硅氧烷薄膜性能的影响.结果表明,减小电极间距加速了单体的解离和碳基成分的氧化.随着电极距离的减小,薄膜的沉积速度增大,薄膜从有机无机聚硅氧烷薄膜(SiOxCyHz)向无机薄膜(SiO2)转化.薄膜中高解离能Si-O键的增多,降低了原子氧的侵蚀率.研究结果为用PECVD方法制备其他有机硅功能薄膜奠定了技术基础.
Abstract
Compared to conventional methods of preparing protective films,the plasma polymerization approach is a more efficient,dry,and simple preparation procedure that allows the preparation of dense thin films with a thickness of hun-dreds of nanometers on a variety of substrates.In this paper,anti-atomic oxygen polysiloxane thin film were prepared on large-area flexible Kapton substrate by plasma-enhanced chemical vapor deposition(PECVD).The effect of electrode spac-ing on the properties of anti-atomic oxygen polysiloxane thin film was investigated using SEM,AFM,FTIR and XPS.The re-sults show that the reduction of electrode spacing accelerates the degree of monomer dissociation and the oxidation process of carbon-based components.With the decrease of electrode spacing,the deposition rate of the film increases,and the film trans-forms from organic-inorganic polysiloxane film(SiOxCyHz)to inorganic film(SiO2).The increase of high dissociation ener-gy Si-O bonds in the as-deposited films reduces the erosion rate of atomic oxygen of the films.This paper also establishes a technical foundation for the adjustment of the properties of other organosilicon functional films prepared by PECVD.
关键词
等离子增强化学气相沉积/六甲基二硅氧烷/电极间距/薄膜/原子氧Key words
PECVD/hexamethyldisiloxane(HMDSO)/electrode spacing/thin film/atomic oxygen引用本文复制引用
基金项目
国家自然科学基金(12305289)
国家自然科学基金(U1937601)
国家重点研发计划(2022YFB3806300)
甘肃省自然科学基金(23JR-RA1363)
国防基础科研项目(JCKY 2020203 b019)
五院共性工艺技术研究项目(GXJS1701)
出版年
2024
NETL
NSTL
维普
万方数据