真空与低温2024,Vol.30Issue(2) :112-118.DOI:10.12446/j.issn.1006-7086.2024.02.002

非平衡磁控溅射W掺杂类金刚石薄膜的制备与性能研究

Preparation and Properties of W-doped Diamond-like Carbon Films by Unbalanced Magnetron Sputtering

林颖聪 梁爽 代伟 林海天 王启民
真空与低温2024,Vol.30Issue(2) :112-118.DOI:10.12446/j.issn.1006-7086.2024.02.002

非平衡磁控溅射W掺杂类金刚石薄膜的制备与性能研究

Preparation and Properties of W-doped Diamond-like Carbon Films by Unbalanced Magnetron Sputtering

林颖聪 1梁爽 2代伟 3林海天 2王启民3
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作者信息

  • 1. 广东工业大学机电工程学院,广州 510006;广东华升纳米科技股份有限公司,广东 东莞 523819
  • 2. 广东华升纳米科技股份有限公司,广东 东莞 523819
  • 3. 广东工业大学机电工程学院,广州 510006
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摘要

为了研究W掺杂对类金刚石薄膜性能的影响,采用非平衡磁控溅射方法,通过改变WC靶功率,在YG6硬质合金基体上制备了 5组不同W原子百分数(0%~14%)的含氢类金刚石薄膜(a-C:H:W).用扫描电镜分析了薄膜的形貌,用拉曼光谱分析了薄膜的微观结构,分别用纳米压痕仪、划痕仪、摩擦磨损试验仪测试了薄膜的纳米硬度、膜基结合力和摩擦学性能.结果表明,a-C:H:W薄膜表面为丘状颗粒,随着WC靶功率的增加,颗粒尺寸先减小后增加;W掺杂可促进薄膜的石墨化;W原子百分数为 4%的薄膜的临界划痕力Lc2值达到 78.28 N,磨损率为5.8×10-8 mm3/(N·m),摩擦因数为0.09.

Abstract

In order to study the effect of W doping on the properties of diamond-like carbon films,five groups of hydro-genated diamond-like carbon films(a-C:H:W)with different W atomic percentage(0%~14%)were prepared on YG6 ce-mented carbide substrate by unbalanced magnetron sputtering method by changing the power of WC target.The surface mor-phology of the film was analyzed by scanning electron microscopy.The microstructure of the films was analyzed by Raman spectroscopy.The nano-hardness,adhesion and tribological properties of the film were characterized by nanoindenter,scratch tester and tribometer.The results show that the surface of a-C:H:W film is mound particles,with the increase of WC target power,the particle size decreases first and then increases,the degree of graphitization of the film increases with the in-crease of the doping amount,the critical scratch force Lc2 value of the film with 4%W doping atom percentage reaches 78.28 N,the wear rate is 5.8×10-8 mm3/N·m,and the friction coefficient is 0.09.

关键词

磁控溅射/DLC薄膜/元素掺杂/表面形貌/结合力

Key words

magnetron sputtering/DLC films/element doping/surface topography/adhesive force

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基金项目

广东省自然科学基金(2021A1515011921)

出版年

2024
真空与低温
中国航天科技集团公司第五研究院510研究所

真空与低温

CSTPCD
影响因子:0.567
ISSN:1006-7086
参考文献量29
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