首页|HL-2A装置硅化镀膜壁处理控制杂质行为研究

HL-2A装置硅化镀膜壁处理控制杂质行为研究

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硅化壁处理能有效控制等离子体杂质和再循环水平,是HL-2A装置的常规壁处理手段.介绍了HL-2A装置的硅化壁处理系统以及硅化镀膜壁处理控制杂质行为的主要研究进展.HL-2A装置硅化壁处理系统包括离线硅化和在线硅化壁处理系统,分别采用辉光放电辅助沉积以及等离子体放电辅助沉积进行硅化镀膜壁处理.实验结果表明,离线硅化壁处理后氧杂质明显降低,但随着实验进行会逐渐增加,硅化镀膜寿命约 150炮.为进一步开展研究,HL-2A采用了在线硅化壁处理技术,研究发现在线硅化壁处理过程中碳、氧、铁等杂质均有所减少.两种硅化方式下真空室内的H2O、CO含量均明显降低,在线硅化壁处理耗气量远少于离线硅化.通过硅化壁处理,有效地提升了HL-2A等离子体性能,也为未来聚变装置稳态运行器壁的处理提供了重要技术参考.
Study of Impurity Control by Siliconization on HL-2A Tokamak
The plasma impurity and recycling could be effectively controlled by siliconization,which is a conventional wall conditioning method for HL-2A Tokamak.The recent progress of the siliconization system and the impurity control be-havior by siliconizaition on HL-2A are introduced.The siliconization system includes two subsytems:one is used for the of-fline siliconization experiment which employs glow discharge for coating,and the other one is used for the real-time sili-conization experiment which implements coating during plasma discharge.The experimental results show that the oxygen im-purity is significantly reduced after offline siliconization,but it will gradually increase following the plasma discharge experi-ment.The offline siliconization effect lasted for about 150 shots.In order to make further study,real-time siliconization was developed on HL-2A.The results show that carbon,oxygen and iron levels all drop during the real-time siliconization.The amounts of H2O and CO in the vacuum vessel were decreased after both the offline and real-time siliconization,while the real-time siliconization consumed less gas.The plasma performance of HL-2A was effectively improved by siliconization.The study provides an important technical support for the wall conditioning of the future steady-state operation fusion device.

wall conditioningoffline siliconizationreal-time siliconizationresidual gas mass spectraimpurity spectrum

黄向玫、曹诚志、胡毅、周军、高霄雁

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核工业西南物理研究院,成都 610025

壁处理 离线硅化 在线硅化 残余气体质谱 杂质光谱

国家重点研发计划国家重点研发计划

2018YFE03031012022YFE03030002

2024

真空与低温
中国航天科技集团公司第五研究院510研究所

真空与低温

CSTPCD
影响因子:0.567
ISSN:1006-7086
年,卷(期):2024.30(3)
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