首页|低钯含量CeO2/ZnO的超声法制备及其构建亚秒级丙酮传感器的研究

低钯含量CeO2/ZnO的超声法制备及其构建亚秒级丙酮传感器的研究

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在实际应用中,常使用贵金属掺杂制备高性能气体传感器,但是掺杂较高含量贵金属会导致制备成本提高.为此,本研究采用超声辅助和静电纺丝合成了低钯含量的CeO2/ZnO-Pd丙酮传感器,该传感器具有快速响应和对丙酮的高选择性.在相同的钯添加量的情况下,使用超声法掺杂比搅拌法制备的传感器选择性系数提升了1.88倍.与纯PdO掺杂的CeO2/ZnO-PdO材料相比,CeO2/ZnO-Pd中Pd的含量约为CeO2/ZnO-PdO的30%,但对丙酮的选择性系数提高了2.56倍.实验结果表明,在300℃条件下CeO2/ZnO-Pd传感器对50×10-6丙酮有较高的响应(22.54),选择性系数是CeO2/ZnO传感器的2.57倍.同时,该传感器具有亚秒级的响应时间(0.6 s),且对330×10-9的丙酮仍然有2.36的响应.传感器性能提高可以归因于超声法掺杂使得Pd颗粒更小从而增加了Pd与气体接触面积,CeO2/ZnO-Pd中npn异质结的构成,以及Pd/PdO的协同作用.这表明超声掺杂Pd为提高掺杂金属的利用率和制备高选择性气体传感器提供了思路.
Low palladium content CeO2/ZnO composite for acetone sensor with sub-second response prepared by ultrasonic method
In practical applications,noble metal doping is often used to prepare high performance gas sensors,but more noble metal doping will lead to higher preparation costs.In this study,CeO2/ZnO-Pd with low palladium content was prepared by ultrasonic method with fast response and high selectivity for acetone sensing.With the same amount of palladium added,the selectivity coefficient of CeO2/ZnO-Pd is 1.88 times higher than that of the stirred sensor.Compared with the pure PdO-doped CeO2/ZnO-PdO material,the content of Pd in CeO2/ZnO-PdO is about 30%of that in CeO2/ZnO-PdO,but the selectivity coefficient for acetone is 2.56 times higher.The CeO2/ZnO-Pd sensor has a higher response(22.54)to 50×10-6 acetone at 300℃and the selectivity coefficient is 2.57 times that of the CeO2/ZnO sensor.The sensor has a sub-second response time(0.6 s)and still has a 2.36 response to 330×10-9 of acetone.Ultrasonic doping makes Pd particles smaller and increases the contact area with gas.Meanwhile,the composition of n-p-n heterojunction and the synergistic effect of Pd/PdO improve the sensor performance.It shows that ultrasonic Pd doping provides a way to improve the utilization rate of doped metals and prepare highly selective gas sensors.

low palladiumsub-second responceultrasonic methodacetone sensorheterojunction

陈徐倢、幸巧玲、唐轩、蔡勇、张明

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Hunan Provincial Key Laboratory of Low-dimensional Structural Physics&Devices,School of Physics and Electronics,Hunan University,Changsha 410082,China

School of Mechanical Engineering and Mechanics,Xiangtan University,Xiangtan 411105,China

Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 410082,China

Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education,National Key Laboratory of Power Semiconductor and Integration Technology,College of Semiconductors(College of Integrated Circuits),Hunan University,C

Research Institute of Hunan University in Chongqing,Chongqing 401120,China

Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education,National Key Laboratory of Power Semiconductor and Integration Technology,C

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低钯含量 亚秒级 超声法 丙酮传感器 异质结

Natural Science Foundation of Hunan Province,ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China

2023JJ100055177208251804106

2024

10.1007/s11771-024-5724-2

中南大学学报(英文版)
中南大学

中南大学学报(英文版)

CSTPCDEI
影响因子：0.47
ISSN：2095-2899
年,卷(期)：2024.31(7)
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