Oxygen vacancy induced carrier mobility enhancement in nano-multilayered ZrO2∶Y2O3/SrTiO3 thin films for non-volatile memory devices
The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attracted considerable attention.The device's carrier mobility can be significantly improved by forming a nano-multilayered heterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO2∶Y2O3(YSZ)/SrTiO3(STO)]n/Nb∶SrTiO3(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nano-multilayered active layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and its corresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers of YSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in the device,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach in improving the performance of memristor dominated by oxygen vacancy transporting mechanism.
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