首页|磁控溅射法制备钛镓锌氧化物透明导电膜的介电和光电性能研究

磁控溅射法制备钛镓锌氧化物透明导电膜的介电和光电性能研究

The dielectric and opto-electronic properties of titanium-gallium-zinc oxide transparent conducting films prepared by magnetron-sputtering method

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采用磁控溅射技术制备了钛镓锌氧化物(TiGaZnO)透明导电膜,研究了衬底温度对薄膜样品介电、光电和结构性能的影响.结果表明:所制备的薄膜样品均为(002)择优取向的六角纤锌矿结构,并且衬底温度对薄膜性能具有明显的影响.当衬底温度为610 K时所制备的TiGaZnO薄膜具有较优的光电性能和结晶质量,对应的品质因数为1.23×104 Ω-1·cm-1、平均可见光透过率为86.85%、电阻率为5.76×10-4 Ω·cm、平均晶粒尺寸为83.42 nm.另外,利用光谱拟合方法得到了TiGaZnO薄膜的光学常数,进一步研究了衬底温度对薄膜光学性质和介电性能的影响.结果表明TiGaZnO薄膜的折射率、介电常数和耗散系数均依赖于衬底温度.
The transparent conducting films(TCFs)of titanium-gallium-zinc oxide(TiGaZnO)were fabricated by magnetron-sputtering technique.The dependence of dielectric,opto-electronic and structural properties of the TiGaZnO TCFs on substrate temperature was investigated.The results indicate that all the thin films have a wurtzite hexagonal crystal structure and(002)-preferred orientation.The substrate temperature has a significant impact on the film properties of the TiGaZnO TCFs.The sample fabricated at 610 K possesses the optimal opto-electronic performance and crystalline quality,with the highest quality factor,maximum average visible transmittance,lowest resistivity and largest average grain size of 1.23×104 Ω-1·cm-1,86.85%,5.76×10-4 Ω·cm and 83.42 nm,respectively.Moreover,the optical constants of the TiGaZnO TCFs were determined by the optical spectrum fitting method(OSFM).The influences of substrate temperature on the optical constants and dielectric properties were studied.The results demonstrate that the refractive index,dielectric constant and dissipation factor are dependent on the substrate temperature for the TiGaZnO TCFs.

transparent conducting filmszinc oxidedielectric constantopto-electronic properties

陆轴、郭声彦、谢泉

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贵州师范学院 物理与电子科学学院,贵阳 550018

贵州大学 大数据与信息工程学院,贵阳 550025

贵州大学 人武学院,贵阳 550025

透明导电膜 氧化锌 介电常数 光电性能

贵州省科技计划

黔科合基础[2019]1248

2024

中南民族大学学报(自然科学版)
中南民族大学

中南民族大学学报(自然科学版)

影响因子:0.536
ISSN:1672-4321
年,卷(期):2024.43(4)
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