首页|Defects in monolayer WS2 grown via sulfurization of WSe2

Defects in monolayer WS2 grown via sulfurization of WSe2

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The conversion of chalcogen atoms into other types of chalcogen atoms in transition metal dichalcogenides ex-hibits significant advantages in tuning the bandgaps and constructing lateral heterojunctions.However,despite atomic defects at the atomic scale were inevitably formed during conversion process,the construction of dislo-cations remains difficult.Here,we conducted in-situ sulfurization to achieve structural transformation from monolayer WSe2 to WS2 successfully.We probe these transformations at atomic scale using high-angle annular dark field scanning transmission electron microscopy(HAADF-STEM)and study structural defects of sulfurized-WS2 by strain and displacement fields.We discovered that high-quality WSe2 flakes were completely sulfurized while dislocations were successfully constructed,manifesting atomic surface roughness and structural disorders.Our work provides insights into designing and optimizing customized Transition metal dichalcogenides(TMDs)materials in controlled synthesis and defect engineering.

Tungsten disulfideTungsten diselenideSulfurizationDislocationsStrain and displacement fields

Shunhui Zhang、Xiang Lan、Hang Liu、Xuyang Zhang、Baihui Zhang、Zhikang Ao、Tian Zhang、Peng Chen、Xiangdong Yang、Fangping Ouyang、Zhengwei Zhang

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Hunan Key Laboratory of Nanophotonics and Devices,School of Physics,Central South University,Changsha,410083,Hunan,China

College of Materials Science and Engineering,Hunan University,Changsha,410082,Hunan,China

Physical Sciences and Engineering Division,King Abdullah University of Science and Technology,Thuwal,23955-6900,Saudi Arabia

School of Energy and Power Engineering,Changsha University of Science and Technology,Changsha,410114,China

School of Flexible Electronics(Future Technologies),Institute of Advanced Materials,Jiangsu National Synergetic Innovation Centre for Advanced Materials,Nanjing Tech University,Nanjing,211816,China

School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China

Institute of Micro/Nano Materials and Devices,Ningbo University of Technology,Ningbo,315211,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaHuman Provincial Natural Science Foundation of ChinaChangsha Natural Science FoundationKey Project of the Natural science Program of Xinjiang Uygur Autonomous Region

523022045210217661904080623414022022JJ20085kq22020922023D01D03

2024

10.1016/j.pnsc.2024.02.016

自然科学进展·国际材料(英文)
国家自然科学基金委员会

自然科学进展·国际材料(英文)

影响因子：0.25
ISSN：1002-0071
年,卷(期)：2024.34(2)
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