首页|Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition

Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition

扫码查看
原文链接
  • NETL
  • NSTL
  • 万方数据
The study on the uniformity of electrical performance of large wafer-scale Hf0.5Zr0.5O2(HZO)ferroelectric ca-pacitors is still lacking yet now.In this work,TiN/HZO/TiN metal-ferroelectric-metal(MFM)devices on 12-inch silicon wafers have been fabricated by thermal atomic layer deposition.The correlation of thickness uniformity with device-to-device variation of electrical properties and yield of the 12-inch MFM system was investigated.It was found that the uniformity of ferroelectric properties is closely related to the variation of HZO thickness of the MFM system,the concentration of oxygen vacancies in the micro-region of the HZO film,and the ferroelectric phase micro-distribution on 12-inch Si wafer.This work provides some important information for the perfor-mance optimization of HfO2-based ferroelectric random access memories.

Ferroelectric random access memoryAtomic layer depositionHf0.5Zr0.5O2 ferroelectric thin film12-Inch Si waferElectrical uniformity

Wen-Juan Ding、Yu Liu、Zhi-Qiang Xiao、Li Gao、Yu-Chen Li、Lin Zhu、Xiang Li、Wei-Min Li、Shuang Chen、Ai-Dong Li

展开 >

National Laboratory of Solid State Microstructures,College of Engineering and Applied Sciences,and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,210093,China

Jiangsu Leadmicro Nano-Technology Co.,Ltd.,Wuxi,214000,China

Semiconductor Manufacturing North China Corp.,Beijing,100176,China

Kuang Yaming Honors School,Nanjing University,Nanjing,210093,China

展开 >

2024

10.1016/j.pnsc.2024.05.008

自然科学进展·国际材料(英文)
国家自然科学基金委员会

自然科学进展·国际材料(英文)

影响因子：0.25
ISSN：1002-0071
年,卷(期)：2024.34(3)