Effects of exogenous silicon pretreatment on physiological characteristics of Hedera nepalensis var.sinensis under low temperature stress
In this paper,the effects of different concentrations of exogenous silicon pretreatment on photo-synthesis,fluorescence and other physiological characteristics of Hedera nepalensis var.sinensis plants under low temperature(4 and 1℃)were studied by using a common garden ground cover plant Hedera nepalensis var.sinensis as the research material.The results showed that low temperature decreased the net photosynthetic rate and photosynthetic pigment content of Hedera nepalensis var.sinensis,and caused osmotic and oxidation stress.Pretreatment with exogenous 1 mmol L-1 silicon significantly increased the net photosynthetic rate(Pn),actual photochemical quantum yield[Y(Ⅱ)],maximum photochemical quan-tum yield(Fv/Fm)and proline(Pro)content of Hedera nepalensis var.sinensis at 4 and 1℃.The activity of superoxide dismutase(SOD)and the content of chlorophyll a(Chla)were significantly increased at 1℃.Ex-ogenous 2 mmol·L-1 silicon pretreatment had a certain inhibitory effect on the growth of Hedera nepalensis var.sinensis at room temperature,which showed a decrease in Pn,Y(Ⅱ)and Fv/Fm value,but had no signifi-cant effect on Pn,Y(Ⅱ),Fv/Fm value and Chla content of Hedera nepalensis var.sinensis at low temperature of 4 and 1 ℃.In summary,exogenous 1 mmol L-1 silicon pretreatment can improve the photosynthetic,an-tioxidant and osmotic regulation capacity of Hedera nepalensis var.sinensis under low temperature stress,so as to reduce the damage caused by low temperature stress.Therefore,adding appropriate concentra-tion of exogenous silicon can be used as an effective measure to improve the cold resistance of Hedera nepalensis var.sinensis.
Hedera nepalensis var.sinensissiliconlow temperature stressphysiological characteristics