首页|外源硅预处理对低温胁迫下常春藤生理特性的影响

外源硅预处理对低温胁迫下常春藤生理特性的影响

扫码查看
本文以常用园林地被植物常春藤(Hedera nepalensis var.sinensis)扦插水培苗为研究材料,研究不同浓度外源硅预处理对低温(4和1℃)胁迫下常春藤植株光合荧光等生理特性的影响.结果表明:低温降低常春藤的净光合速率及光合色素含量,并对其造成了渗透胁迫和氧化胁迫.外源1 mmol·L-1硅预处理可显著提高4和1℃低温下常春藤的净光合速率(Pn)、光系统Ⅱ的实际光化学量子产量[Y(Ⅱ)]、最大光化学量子产量(Fv/Fm)及脯氨酸(Pro)含量;以及显著提高1 ℃低温下常春藤超氧化物歧化酶(SOD)活性和叶绿素a(Chia)含量.外源2 mmol·L-1硅预处理对常温下常春藤的生长有一定的抑制作用,表现为Pn值、Y(Ⅱ)值和Fv/Fm值的下降,而对4和1℃低温条件下常春藤的Pn值、Y(Ⅱ)值、Fv/Fm值及Chia含量无显著影响.综上所述,外源1 mmol·L-1的硅预处理可提高低温胁迫下常春藤的光合能力、抗氧化能力及渗透调节能力,从而减轻低温胁迫对其造成的伤害.因此,添加适宜浓度的外源硅可作为提高常春藤抗寒性的有效措施.
Effects of exogenous silicon pretreatment on physiological characteristics of Hedera nepalensis var.sinensis under low temperature stress
In this paper,the effects of different concentrations of exogenous silicon pretreatment on photo-synthesis,fluorescence and other physiological characteristics of Hedera nepalensis var.sinensis plants under low temperature(4 and 1℃)were studied by using a common garden ground cover plant Hedera nepalensis var.sinensis as the research material.The results showed that low temperature decreased the net photosynthetic rate and photosynthetic pigment content of Hedera nepalensis var.sinensis,and caused osmotic and oxidation stress.Pretreatment with exogenous 1 mmol L-1 silicon significantly increased the net photosynthetic rate(Pn),actual photochemical quantum yield[Y(Ⅱ)],maximum photochemical quan-tum yield(Fv/Fm)and proline(Pro)content of Hedera nepalensis var.sinensis at 4 and 1℃.The activity of superoxide dismutase(SOD)and the content of chlorophyll a(Chla)were significantly increased at 1℃.Ex-ogenous 2 mmol·L-1 silicon pretreatment had a certain inhibitory effect on the growth of Hedera nepalensis var.sinensis at room temperature,which showed a decrease in Pn,Y(Ⅱ)and Fv/Fm value,but had no signifi-cant effect on Pn,Y(Ⅱ),Fv/Fm value and Chla content of Hedera nepalensis var.sinensis at low temperature of 4 and 1 ℃.In summary,exogenous 1 mmol L-1 silicon pretreatment can improve the photosynthetic,an-tioxidant and osmotic regulation capacity of Hedera nepalensis var.sinensis under low temperature stress,so as to reduce the damage caused by low temperature stress.Therefore,adding appropriate concentra-tion of exogenous silicon can be used as an effective measure to improve the cold resistance of Hedera nepalensis var.sinensis.

Hedera nepalensis var.sinensissiliconlow temperature stressphysiological characteristics

金红燕、刘娇、胡星、杨雄伟、黄晓霞

展开 >

西南林业大学园林园艺学院,国家林业与草原局西南风景园林工程技术研究中心,昆明 650224

常春藤 低温胁迫 生理特性

云南省高层次人才"青年拔尖人才"项目

YNWR-QNBJ-2020-222

2024

植物生理学报
中国植物生理学会,中国科学院上海生命科学研究院植物生理生态研究所

植物生理学报

CSTPCD北大核心
影响因子:1.532
ISSN:2095-1108
年,卷(期):2024.60(3)
  • 16