首页|Monolithically Integrated Photonic Structures for Stable On-Chip Solar Blind Communications
Monolithically Integrated Photonic Structures for Stable On-Chip Solar Blind Communications
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A solar-blind multi-quantum well (MQW) structure wafer based on AlGaN materials is epitaxial growth by metal-organic chemical vapor deposition (MOCVD). The monolithically integrated photonic chips including light-emitting diodes (LEDs),waveguides,and photodetec-tors (PDs) are presented. The results of the finite-difference time-domain (FDTD) simulation confirm the strong light constraint of the wave-guide designed with the triangular structure in the optical coupling region. Furthermore,in virtue of predominant ultraviolet transverse mag-netic (TM) modes,the solar blind optical signal is more conducive to lateral transmission along the waveguide inside the integrated chip. The integrated PDs demonstrate sufficient photosensitivity to the optical signal from the integrated LEDs. When the LEDs are operated at 100 mA current,the photo-to-dark current ratio (PDCR) of the integrated PD is about seven orders of magnitude. The responsivity,specific detectivity,and external quantum efficiency of the integrated self-driven PD are 74.89 A/W,4.22×1013 Jones,and 3.38×104％,respectively. The stable on-chip optical information transmission capability of the monolithically integrated photonic chips confirms the great potential for application in large-scale on-chip optical communication in the future.
monolithically integrationphotonic chipsUVCsolar-blind communication
HE Rui、HU Qiang、RAN Junxue、WANG Junxi、WEI Tongbo
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Research and Development Center for Wide Bandgap Semiconductors,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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