首页|Monolithically Integrating a 180° Bent Waveguide into a Ⅲ-Nitride Optoelectronic On-Chip System
Monolithically Integrating a 180° Bent Waveguide into a Ⅲ-Nitride Optoelectronic On-Chip System
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GaN-based devices have developed significantly in recent years due to their promising applications and research potential. A ma-jor goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption. This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packag-ing costs. In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a Ⅲ-nitride-on-silicon wafer. The system includes a near-ultraviolet light source,a monitor,a 180° bent waveguide,an electro-absorption modulator,and a receiver,all in-tegrated without the need for regrowth or post-growth doping. 35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.
GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,Nanjing University of Posts and Telecommunications,Nanjing 210003,China
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