首页|Performance Characterization of Visible Light Communication Based on GaN High-Voltage LED/PD
Performance Characterization of Visible Light Communication Based on GaN High-Voltage LED/PD
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While considerable research has been conducted on the structural principles,fabrication techniques,and photoelectric properties of high-voltage light-emitting diodes (LEDs),their performance in light communication remains underexplored. A high-voltage series-connected LED or photodetector (HVS-LED/PD) based on the gallium nitride (GaN) integrated photoelectronic chip is presented in this pa-per. Multi-quantum wells (MQW) diodes with identical structures are integrated onto a single chip through wafer-scale micro-fabrication tech-niques and connected in series to construct the HVS-LED/PD. The advantages of the HVS-LED/PD in communication are explored by testing its performance as both a light transmitter and a PD. The series connection enhances the device's 3 dB bandwidth,allowing it to increase from 1.56 MHz to a minimum of 2.16 MHz when functioning as an LED,and from 47.42 kHz to at least 85.83 kHz when operating as a PD. The re-sults demonstrate that the light communication performance of HVS-LED/PD is better than that of a single GaN MQW diode with bandwidth and transmission quantity,which enriches the research of GaN-based high-voltage devices.
high-voltage LEDshigh-voltage PDsGaN MQW diode arraycommunication characterizationvisible light communication
LU Meixin、JIANG Zitong、FANG Li、YAN Yiqun、YAN Jiabin
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Nanjing University of Posts and Telecommunications,Nanjing 210003,China
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