C离子对AlGaAs/InGaAs异质结的辐照影响
Effect of C Ion Irradiation on AlGaAs/InGaAs Heterojunction
王海丽 1杨梦婕 1马晓龙 1许坤 1段向阳 1王献立1
作者信息
- 1. 郑州航空工业管理学院,河南 郑州 450046
- 折叠
摘要
基于SRIM软件计算了不同能量的C离子在AlGaAs/InGaAs异质结中的平均投影射程和辐照损伤区,仿真了能量为500keV、800keV、1100keV的C离子入射到AlGaAs/InGaAs异质结中的能量损失情况,发现随着入射离子能量的增加,电离能比例增加,非电离能比例降低,入射离子产生的电离能损远大于反冲原子产生的电离能损,反冲原子产生的声子能损远多于入射离子产生的声子能损;通过仿真还发现,当C离子的能量为800keV时,辐照损伤区在异质结处且在异质结处产生的空位缺陷最多.
Abstract
In this paper,the damage caused by C ion irradiation on AlGaAs/InGaAs heterojunction was investigated.The projection ranges of C ions and irradiation damage area with varying energies in the AlGaAs/InGaAs heterojunc-tion were calculated by SRIM.In addition,the energy loss caused by 500keV,800keV,and 1100keV C ions incident on the basic structure of AlGaAs/InGaAs heterojunction was also simulated.It was observed that with the increase of incident ion energy,the proportion of ionizing energy loss increases,while the proportion of non-ionizing energy loss decreases,and the ionizing energy loss induced is mainly comes from incident ion rather than recoil atom,while the phonon energy loss mainly comes from recoil atom rather than incident ion.Additionally,it was found that when us-ing 800keV energy for C ions,the irradiation damage area is the heterojunction,and a higher number of vacancy de-fects are generated.
关键词
C离子辐照/AlGaAs/InGaAs异质结/电离能损/非电离能损/空位Key words
C ion radiation/AlGaAs/InGaAs heterojunction/ionization energy loss/non-ionizing energy loss/vacan-cies引用本文复制引用
基金项目
河南高校重点科研项目基础研究专项计划(22ZX012)
河南省重点研发与推广专项(科技攻关)(232102230130)
&&(232102210179)
出版年
2024
NETL
NSTL
万方数据