首页|Optimization of gallium nitride-based laser diode through transverse modes analysis
Optimization of gallium nitride-based laser diode through transverse modes analysis
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NETL
NSTL
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.
lasers and laser opticssemiconductor lasersoptical design and fabrication
NETL
NSTL
