首页|Ferroelectric Properties of Epitaxial BiFe_(0.97)Mn_(0.03)O_3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

Ferroelectric Properties of Epitaxial BiFe_(0.97)Mn_(0.03)O_3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

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  • NSTL
  • Trans Tech Publications Ltd
We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe_(0.97)Mn_(0.03)O_3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO_2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO_2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}＞{110}＞{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm~2 at 100 kHz, 25℃.

BiFeO_3thin filmepitaxialcrystal orientationPLD

Hyun-young Go、Naoki Wakiya、Takanori Kiguchi、Tomohiko Yoshioka、Osamu Sakurai、Jeffrey S. Cross、Junzo Tanaka、Kazuo Shinozaki

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Dept. Metallurgy & Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S7-6 Ookayama, Meguro-ku, Tokyo 152-8550, Japan

Department of Materials Science & Chemical Engineering, Shizuoka Univ., 3-5-1 Johoku Naka-ku, Hamamatsu 432-8561, Japan

Institute for Materials Research, Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

2010

10.4028/www.scientific.net/KEM.421-422.111

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.421/422
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