首页|Dielectric Properties of Pb_(1-x)Ba_xZrO_3 Thin Films with Higher Barium Content

Dielectric Properties of Pb_(1-x)Ba_xZrO_3 Thin Films with Higher Barium Content

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  • Trans Tech Publications Ltd
The dc bias and temperature dependence of dielectric properties of Pb_(1-x)Ba_xZrO_3 (PBZ) thin films with higher x (x=0.6, 0.7, 0.8 and 1) were investigated in detail. The results indicated that Pb_(0.4)Ba_(0.6)ZrO_3 films possessed a moderate tunability of 32.3% and a higher figure of merit of 53.8, which were measured at 100 kHz and at room temperature. Moreover, Pb_(0.4)Ba_(0.6)ZrO_3 films exhibited a smaller temperature coefficient of capacitance TCC_(-20-90)=-1390 ppm/℃.

PBZ filmsstructuredielectric properties

Xihong Hao、Jiwei Zhai

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Functional Materials Research Laboratory, Tongji University, Siping Road 1239, Shanghai 200092, China College of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China

Functional Materials Research Laboratory, Tongji University, Siping Road 1239, Shanghai 200092, China

2010

10.4028/www.scientific.net/KEM.421-422.119

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.421/422
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