首页|Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing
Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NETL
NSTL
Trans Tech Publications Ltd
After depositing amorphous (Bi_(0.5)La_(0.5))(Ni_(0.5)Ti_(0.5))O_3 (BLNT) films on BLNT seed layer/Pt(100)/ MgO(100) substrates by room-temperature sputtering, the crystallization of the perovskite-struc-tured films has been tried by hot isostatic pressing (HIP). The samples with a single-phase perovskite structure HIP-treated at 800℃ for 1 h under gas pressures of 0.5-1.0 MPa showed good crystallinity of Δθ= 0.96-0.98° without accompanying the precipitation of the secondary phase. It was confirmed that a large root mean square roughness value of 44.2 nm for the sample HIP-treated at 800℃ for 1 h under gas pressure of 0.1 MPa is due to innumerable Bi_4Ti_3O_(12)-like rod-shaped grains precipitated in the film surface, based on atomic force microscopy. It is shown that the BLNT sample HIP-treated at 800℃ for 1 h under gas pressure of 1.0 MPa exhibits the best hysteresis loop shape with a remanent polarization of P_r = 5 μC/cm~2 and a coercive field of E_c = 150 kV/cm of the six.
NETL
NSTL
Trans Tech Publications Ltd
