Crystalline ZnO films were grown on Y-stabilized ZrO_2 substrates heated at 300 - 600 ℃ in NH_3 atmosphere. It is clarified from Fourier transform infrared measurements that N-doped ZnO films grown at 350 and 400 ℃ contain N-C and Zn-H bonds. In the devices of n-type ZnO/N-doped ZnO/Au, a good rectification characteristic is attained for an N-doped ZnO film deposited at 300℃, whereas a linear current vs. voltage characteristic is seen for a film deposited at 500 ℃.
NETL
NSTL
Trans Tech Publications Ltd
