首页|Preparation of (Ba_(1-x), Sr_x)TiO_3 Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties

Preparation of (Ba_(1-x), Sr_x)TiO_3 Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties

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In this study, (Ba_(1-x),Sr_x)TiO_3 thin films of various composition ratios were deposited on glazed Al_2O_3 substrates by the CSD method, and the temperature dependence of the dielectric property was analyzed. The dielectric property of the BST (80/20) thin film annealed at 800℃ was highly tunable, and the temperature dependence of the dielectric constant was stabilized at around room temperature. However, this BST (80/20) thin film exhibited intense ferroelectricity. Its tan5 intensified to 0.0511 in the high-frequency range (1 MHz). After the BST thin film was annealed at 600℃, the grain size of the BST thin film was reduced to 40 nm and the ferroelectricity was alleviated. The dielectric constant, tanδ, and tunability of the BST thin film at 100 kHz were 158, 0.0170, and 39.6% (214 kV/cm, 6.0 V), respectively. The change rate of the dielectric constant which indicates its temperature dependence, was ±7% or less in the range of -55 to 85℃. Therefore, this BST thin film was considered to guarantee a wide operation temperature range for microwave tunable devices.

(Ba_(1-x),Sr_x)TiO_3BST thin filmAl_2O_3 substratedielectric propertyCSD method

Takashi Nozaka、Yoji Mizutani、Gun Bhakdisongkhram、Yuta Kawakami、Masahiro Echizen、Takashi Nishida、Hiroaki Takeda、Kiyoshi Uchiyama、Tadashi Shiosaki

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Yokohama Denshi Seiko Co., Ltd., 3005-2 Suzawa, Itoigawa, Niigata 949-0301, Japan Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST) 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan

Yokohama Denshi Seiko Co., Ltd., 3005-2 Suzawa, Itoigawa, Niigata 949-0301, Japan

Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST) 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan

Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan

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2010

10.4028/www.sciendfic.net/KEM.421-422.127

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.421/422