首页|Investigation of Oxygen vacancies in Micro-patterned PZT Thin Films using Raman spectroscopy

Investigation of Oxygen vacancies in Micro-patterned PZT Thin Films using Raman spectroscopy

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Micro-patterned Pb(Zr,Ti)O_3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O_3 (PZT) films were formed on dot-patterned SrRuO_3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO_2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.

micro-patterned Pb(Zr,Ti)O_3 filmsraman spectroscopyoxygen vacancy

Ken Nishida、Minoru Osada、Shintaro Yokoyama、Takafumi Kamo、Takashi Fujisawa、Keisuke Saito、Hiroshi Funakubo、Takashi Katoda、Takashi Yamamoto

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Department of Communications Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, kanagawa 239-8686, Japan

Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Bruker AXS K. K., 3-9-a Moriya, Kanagawa-ku, Yokohama 221-0022, Japan

Department of Electronic and Photonic System Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kochi 782-8502, Japan

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2010

Key engineering materials

Key engineering materials

ISSN:1013-9826
年,卷(期):2010.421/422
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