首页|Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding

Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding

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Two major analyses were conducted in this paper. In the first, experimental procedures are accomplished to measure the tensile mechanical properties of ultra thin gold wire (φ=1mil) before/after electric flame-off (EFO). Characteristics of free air ball (FAB), heat affected zone (HAZ) and as-drawn wire have been carefully investigated by nanoindentation, microhardness and self-design pull test fixture. Secondary, with the obtained experimental material data, a comprehensive finite element model using software ANSYS/LS-DYNA is successfully developed to simulate the wirebonding. Dynamic analysis is performed to evaluate the overall stress distributions on the underlay microstructure of Cu/low-k wafer. Special emphasizes are focused on the Copper via and the intermetal dielectric (IMD)/undoped silica glass (USG) dielectric microstructure.

free air ballheated affected zonenanoidentationmicrohardnessCu/low-k wafer

Hsiang-Chen Hsu、Pei-Chieh Chin、Chin-Yuan Hu、Wei-Yao Chang、Chang-Lin Yeh、Yi-Shao Lai

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No. 1, Sec. 1, Syuecheng Rd., Dashu Towhship, Kaohsiung County, Taiwan Department of Mechanical and Automation Engineering, I-Shou University, Taiwan

No. 26 Chin 3rd Rd., Nantze Export Processing Zone, Kaohsiung, Taiwan Core Capability Center, Advanced Semiconductor Engineering, Kaohsiung, Taiwan

2010

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.419/420