首页|Effect of incubation time on deposition behavior of Ruthenium films by MOCVD using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyI)Ruthenium
Effect of incubation time on deposition behavior of Ruthenium films by MOCVD using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyI)Ruthenium
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Trans Tech Publications Ltd
The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O_2 system. Substrates with amorphous top-layer having various Hf/Siratio, SiO_2(native oxide)/(001)Si (SiO_2), HfSiON/SiON/(001)Si (HfSiON) and HfO_2/SiON/(001)Si(HfO_2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 ℃ to 300 ℃ revealed that the deposition amount depended on the deposition temperature below 250 ℃, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 ℃ and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.
(2,4-dimethylpentadienyl)(ethylcyclopentadienyl)rutheniumMOCVDrutheniumthin films
Masaki Hirano、Kazuhisa Kawano、Hiroshi Funakubo
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Department of Innovative and Engineered Materials, Tokyo institute of Technology, J2-1508, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 Japan
NETL
NSTL
Trans Tech Publications Ltd
