首页|Redistributing unintentional defects induced by heavy ion implantation in ZnO ceramics

Redistributing unintentional defects induced by heavy ion implantation in ZnO ceramics

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  • NETL
  • NSTL
  • Trans Tech Publications Ltd
The relationship between the defect structure and luminescence property of ZnO ceramics implanted with Ar of 2×10~(15) - 60×10~(15) ions/cm~2 was studied. After annealing, the heavy dose-implanted sample (Ar ≥ 30×10~(15) ions/cm~2) was characterized by a luminescence peak at the 730-nm wavelength. Defects in the implanted region formed voids during post-annealing. Oxygen tracer experiments indicated that grain boundary diffusion in the implanted region was enhanced significantly.

ion implantationdefectsluminescencesecondary ion mass spectrometry

Isao Sakaguchi、Tsubasa Nakagawa、Kenji Matsumoto、Syunichi Hishita、Yutaka Adachi、Naoki Ohashi、Hajime Haneda

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Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan

Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka, 816-8580, Japan

Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan

2010

10.4028/www.scientific.net/KEM.421-422.201

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.421/422
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