首页|Dielectric Properties of Bi_(0.2)K_(0.8)(Zn_(0.1)Ti_(0.1))Ta_(0.8)O_3 Ceramics

Dielectric Properties of Bi_(0.2)K_(0.8)(Zn_(0.1)Ti_(0.1))Ta_(0.8)O_3 Ceramics

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  • Trans Tech Publications Ltd
The Bi_(0.2)K_(0.8)(Zn_(0.1)Ti_(0.1))Ta_(0.8)O_3 and Li doped ceramics prepared via the solid-state reaction technique were investigated. The XRD patterns show the single phase cubic perovskite structure without any evidence of secondary phases when sintered at 1250 ℃ for undoped Bi_(0.2)K_(0.8)(Zn_(0.1)Ti_(0.1))Ta_(0.8)O_3 and sintered at 1100 ℃ for Li doped one. The dielectric properties indicate the diffused phase transition (DPT). The dielectric loss of undoped ceramic increases with increasing frequency in temperature range 270 ℃ down to -150 ℃, which suggests low temperature relaxation, while the dielectric loss of Li doped ceramic reveals the interesting lower value over a wide temperature range of about 0 - 300 ℃.

KTaO_3Bi(Zn_(1/2)Ti_(1/2))O_3dielectric properties

Piyachon Ketsuwan、Anurak Prasatkhetragarn、Supon Ananta、Chien-Chih Huang、David P. Cann、Rattikorn Yimnirun

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School of Science and Technology, Naresuan University Phayao, Phayao 56000, Thailand

Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand

School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis OR 97331, USA

School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000 Thailand

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2010

10.4028/www.scientific.net/KEM.421-422.255

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.421/422
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