首页|Growth and Electrical Properties of PbMg_(0.047)Nb_(0.095)Zr_(0.416)Ti_(0.442)O_3 Films Fabricated by Metalorganic Decomposition
Growth and Electrical Properties of PbMg_(0.047)Nb_(0.095)Zr_(0.416)Ti_(0.442)O_3 Films Fabricated by Metalorganic Decomposition
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NETL
NSTL
Trans Tech Publications Ltd
On the basis of experimental data on the piezoelectric pinpoint composition of ceramics of the ternary system Pb(Mg_(1/3)Nb_(2/3))O_3-PbZrO_3-PbTiO_3 (PMNZT), which we investigated in our previous report, epitaxial PbMg_(0.047)Nb_(0.095)Zr_(0.416)Ti_(0.442)O_3 thick films with thicknesses ranging from 0.4 to 1.9 μm were fabricated on Pt(100)/MgO(100) substrates by metalorganic decomposition. The film-thickness dependence on the structural and electrical properties (dielectric, piezoelectric and ferroelectric properties) was investigated. All PMNZT films exhibited a highly uniform (001) orientation, regardless of the film thickness. The cross-sectional transmission electron microscope micrographs and all the physical data suggest that high-density PMNZT thick films with a thickness ≥ 1.0 μm can be expected to function as highly electrically insulating capacitors with high potential for piezo- and ferroelectric applications.
PMNZTmetalorganic decompositionferroelectricitypiezoelectricitytransmission electron microscopeperovskite compound
NETL
NSTL
Trans Tech Publications Ltd
