首页|Influence of an external magnetic field on injected charges of a Cr_2O_3/Fe/CeO_2/Si MIS capacitor

Influence of an external magnetic field on injected charges of a Cr_2O_3/Fe/CeO_2/Si MIS capacitor

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We investigated the influence of an external magnetic field for the carrier injection process of a metal (Au) / insulator (Cr_2O_3/Fe/CeO_2) / semiconductor (Si) (MIS) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the CeO_2 layer from Si were injected into the Fe or an oxygen deficiency layer formed around the Fe layer. When a magnetic field was applied, the hysteresis window width of this capacitor was reduced. I-V curve analyses under a magnetic field revealed that this reduction was more likely due to the magnetic state of the Fe layer and the interaction between Fe and Cr2O_3.

tunneling effectelectric propertiesmagneto-resistancecapacitance measurementMIS devices

Takeshi Yokota、Shotaro Murata、Sinya Kito、Manabu Gomi

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Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

2010

Key engineering materials

Key engineering materials

ISSN:1013-9826
年,卷(期):2010.421/422
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