首页|Study on Improvement of Oxidation-resistant Capability of Metal-silicide thin Film and Application to Heater
Study on Improvement of Oxidation-resistant Capability of Metal-silicide thin Film and Application to Heater
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Trans Tech Publications Ltd
Thin films of Si-added-MoSi_2 were deposited on Si_3N_4 or alumina substrate using an RF magnetron sputtering with a target made of MoSi_2 and Si powders. The thin film consisted of a mixture of Si and MoSi_2. The resistance of MoSi_2-thin-film heaters fabricated using Si_3N_4 substrate heated for a long time in air increased with increasing heating-time at temperatures near 420℃ due to generation of MoO_3, which is an insulator, in thin film due to the oxidation of Mo in MoSi_2. On the other hand, oxidation-resistant capability of thin-film heater fabricated by adding Si to MoSi_2 was drastically improved compared with MoSi_2 thin-film heater, because Si particles or the Si layer on a MoSi_2 particle prevented the oxidation of MoSi_2. The oxidation-resistant capability was excellent in air at high temperatures near 480℃ for a long heating-time exceeding 950h.
thin-film heater of resistanceMoSi_2addition of SiRF magnetron sputteringoxidation-resistant
Teppei Hayashi、Masashi Sato、Shinzo Yoshikado
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Department of Electronics, Doshisha University, Kyotanabe 610-0321, Japan
NETL
NSTL
Trans Tech Publications Ltd
