首页|Behavior of hydrogen atoms in perovskite-type oxide thin films under electric fields
Behavior of hydrogen atoms in perovskite-type oxide thin films under electric fields
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The behavior of hydrogen in (Ba,Sr)TiO_3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.
barium strontium titanatethin filmcapacitorhydrogendeuteriumsecondary ion mass spectroscopy (SIMS)electric fieldI-V propertyhighly accelerated life test (HALT)
K. Morito、T. Suzuki、Y. Mizuno、I. Sakaguchi、N. Ohashi、K. Matsumoto、H. Haneda
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Taiyo Yuden Co. Ltd., 5607-2 Nakamuroda, Takasaki, Gunma 370-3347, Japan
Nationai institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Nationai institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga Koen, Kasuga, Fukuoka 816-8580, Japan
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NSTL
Trans Tech Publications Ltd
