首页|Photo-assisted VOC Detection by Transparent pn Junction

Photo-assisted VOC Detection by Transparent pn Junction

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The p-NiO/n-ZnO transparent pn heterojunction is prepared by RF magnetron sputtering technique and processed into a chemical sensor element by photolithography pattering and chemical etching process. Forward biased p-NiO/n-ZnO heterojunction sensor can detect VOCs at room temperature and its gas sensitivity is extremely enhanced with the assist of deep UV light incidence. Even if the testing gas is thermodynamically stable such as aromatic VOC, the p-NiO/n-ZnO heterojunction sensor can detect it with the concert mechanism involving "electric" and "photo" assistance.

heterojunctionVOCsensorNiOZnOphoto-excitationconcert mechanism

Yoshinobu Nakamura、Yusuke Morita、Yasuhiro Yoshida、Satoru Fujitsu

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Department of Advanced Materials Science, School of Frontier Science, The University of Tokyo 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan

Department of Materials Science and Ceramic Engineering, Shonan Institute of Technology 1-1-25 Tsujido-nishikaigan Fujisawa, Kanagawa 251-8511, Japan

2010

Key engineering materials

Key engineering materials

ISSN:1013-9826
年,卷(期):2010.421/422
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