首页|Electrical Properties of Pt/Nb-doped SrTiO_3 Schottky Junctions

Electrical Properties of Pt/Nb-doped SrTiO_3 Schottky Junctions

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In this study, we successfully fabricated the Schottky junctions consisting of Pt electrode and high concentration Nb-doped (0.5 wt%) SrTiO_3 (001) single crystal by sputtering process. The carrier concentrations of Nb-0.5wt%-doped SrTiO_3 were determined as 10~(20) /cm~3 order by Hall effect measurement. The electrical properties of junctions were investigated by measuring their current-voltage (I-V), capacitance-voltage (C-V) characteristics at temperature range from 80K to 400K. The hysteresis feature was observed that indicating the alteration of barrier height in junctions especially at lower temperature. The donor concentration and built-in potentials calculated from C~(-2)-V data. showed large discrepancy from Hall effect measurement indicating that the junctions deviate from the ideal Schottky diode model.

schottky junctionsemiconductorNb-dopedperovskite oxidestrontium titanate

Jianyong Li、Takeshi Ohgaki、Ryota Matsuoka、Hideyo Okushi、Naoki Ohashi

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International Center for Materials Nanoarchitectionics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

Sensor Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

International Center for Materials Nanoarchitectionics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan Optronic Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2010

10.4028/www.scientific.net/KEM.421-422.463

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.421/422